Compliant piezoresistive MEMS sensors exhibit great promise for improved on-chip sensing. As compliant sensors may experience complex loads, their design and implementation require a greater understanding of the piezoresistive effect of polysilicon in bending and combined loads. This paper presents experimental results showing the piezoresistive effect for these complex loads. Several n-type polysilicon test structures, fabricated in MUMPs and SUMMiT processes, were tested. Results show that, while tensile stresses cause a linear decrease in resistance, bending stresses induce a nonlinear rise in resistance, contrary to the effect predicted by linear models. In addition, tensile, compressive, and bending loads combine in their effects on resistance. The experimental data illustrate the inability of linear piezoresistance models to predict the piezoresistive trends of polysilicon in bending and combined loads, indicating the need for more complete nonlinear models appropriate for these loading conditions.