Anisotropic high aspect ratio etch development for fluorinated polymers with stress relief technique

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Permanent URL	http://hdl.lib.byu.edu/1877/592
Title	Anisotropic high aspect ratio etch development for fluorinated polymers with stress relief technique
BYU Creator	Kim, S. Nordin, Gregory P.
Creator	Rahmanian, N.
Keywords	anisotropy; etch; high aspect ratio; PFCB polymers
Description/Abstract	The authors have developed an anisotropic, high aspect ratio (18:1)etch for perfluorocyclobutyl (PFCB)polymers with trenches as narrow as 800 nm using a CO/O2 etch chemistry in an inductively coupled plasma reactive ion etcher. Anisotropy is achieved by carbon sidewall passivation. The motivation for this etch development is to use the air trenches as very compact waveguide splitters [S. Kim et al., Opt. Eng. 45, 054602 (2006)] The authors report a new trench widening mechanism due to tensile stress of the PFCB films and a method of avoiding this widening through the use of additional stress relief trenches on both sides of the desired trench.
Source	Nazli Rahmanian, Seunghyun Kim, and Gregory P. Nordin, "Anisotropic high aspect ratio etch development for fluorinated polymers with stress relief technique" J. Vac. Soc. Am. B 24(6) pp. 2572-2577 (2006);
Publisher	American Vacuum Society
Date Original	2006
Date Digital	2007-12-06T16:45:07Z
Language	English eng en
Publication Type	Peer-Reviewed Articles
Type	Text
Format	application/pdf
Owning Institution	Brigham Young University
BYU College	Ira A. Fulton College of Engineering and Technology
BYU Department	Electrical and Computer Engineering
Copyright Status	(c) 2006 American Vacuum Society;
Copyright Use Information	http://www.lib.byu.edu/generic_copyright.html

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Anisotropic high aspect ratio etch development for fluorinated polymers with stress relief technique

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