|
Piezoresistive Models for Polysilicon with Bending or Torsional Loads
|
|
|
|
 |
| Title | Piezoresistive Models for Polysilicon with Bending or Torsional Loads |
| Document Type | Thesis |
| Keywords | piezoresistance, MEMS, accelerometer, torsion, bending, PMT, IPFM, microelectrical, plysilicon, pi, tension, membrane analogy, sensing, sensor, piezoresistive, compliant, mechanism, optimizaton, Gerrit Larsen, Brian Jensen, Larry Howell |
| Abstract | This thesis presents new models for determining piezoresistive response in long, thin polysilicon beams with either axial and bending moment inducing loads or torsional loads. Microelectromechanical (MEMS) test devices and calibration methods for finding the piezoresistive coefficients are also presented for both loading conditions. For axial and bending moment inducing loads, if the piezoresistive coefficients are known, the Improved Piezoresistive Flexure Model (IPFM) is used to find the new resistance of a beam under stress. The IPFM first discretizes the beam into small volumes represented by resistors. The stress that each of these volumes experiences is calculated, and the stress is used to change the resistance of the representative resistors according to a second-order piezoresistive equation. Once the resistance change in each resistor is calculated, they are combined in parallel and series to find the resistance change of the entire beam. If the piezoresitive coefficients are not initially known, data are first collected from a test device. Piezoresistive coefficients need to be estimated and the IPFM is run for the test device's different stress states giving resistance predictions. Optimization is done until changing the piezoresistive coefficients provides model predictions that accurately match experimental data. These piezoresistive coefficients can then be used to design and optimize other piezoresistive devices. A sensor is optimized using this method and is found to increase voltage response by an estimated 10 times. For torsional loads, the test device consists of a slider-crank connected to two torsional legs. The slider-crank creates torsional stress in the legs which causes a change in the electrical resistance through the legs. A model that predicts the effects of a scissor hinge on the slider-crank is presented. Torsional stresses in the legs are calculated delete{using the membrane analogy.} and the legs are discretized into long parallel resistors and the stresses delete{from the membrane analogy} applied to each resistor. Assuming a second-order piezoresistance, an optimization is then done to find the piezoresistive coefficients by changing them until the model prediction fits the test data. These coefficients can be used to predict angular displacement from resistance measurements in fully integrated torsional sensors. Potential applications are discussed, and a torsional accelerometer is presented. |
| Author | Larsen, Gerrit T 1981- |
| Department | Mechanical Engineering |
| Date Submitted | 2009-08-12 |
| Format | application:pdf |
| URL | http://contentdm.lib.byu.edu/ETD/image/etd3165.pdf |
| Language | english |
| Copyright Statement | I hereby certify that, if appropriate, I have obtained and attached hereto a written permission statement from the owner(s) of each third party copyrighted matter to be included in my thesis, dissertation, or project report, and specifically allowing distribution as specified below. I certify that the version I submitted is the same as that approved by my advisory committee. I hereby grant to Brigham Young University and its agents the non-exclusive license to archive and make accessible, under the conditions specified below, my thesis, dissertation, or project report in whole or in part in all forms of media, now or hereafter known. I retain all other ownership rights to the copyright of the thesis, dissertation, or project report. I also retain the right to use in future works (such as articles or books) all or part of this thesis, dissertation, or project report. |
| Display Title | Piezoresistive Models for Polysilicon with Bending or Torsional Loads |
| Defense Date | 2009-08-10 |
| Rights | ; p ©2002 Brigham Young University. All rights reserved. p The information available on this site, including any text, computer codes, data, artwork, video, audio, images or graphics (collectively, the “Material”) may be protected by copyright and other intellectual property laws. Entities other than Brigham Young University (“BYU”) may own copyright in portions of the Material and the reproduction of some Materials may be restricted by privacy and/or publicity rights. p We encourage use of this Material for non-profit and educational purposes, such as personal research, teaching and private study. For these limited purposes, Material from this web site may be displayed and printed, and all copies must include any copyright notice originally included with the Material. p Except as provided above, or any use beyond what is allowed by fair use (Title 17, § 107 U.S.C.), you may not reproduce, republish, post, transmit or distribute any Material from this web site in any physical or digital form without the permission of the copyright owner of the Material. p Inquiries regarding any further use of these Materials should be addressed to the Copyright Licensing Office, 3830 HBLL, Provo, UT 84602. |
|
|
|
|
|